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GTVA107001EC-V1-R0

Name: MACOM GTVA107001EC-V1-R0
Brand: MACOM
SKU: 941-GTVA107001ECV1R0
Price: 931.03 EUR
Availability: OutOfStock

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Mouser No:

941-GTVA107001ECV1R0

Mfr. No:

GTVA107001EC-V1-R0

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 50V 0.9-1.2GHz 700W

Datasheet:

GTVA107001EC-V1-R0 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 50 Multiples: 50

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 50)
	931,03 €	46.551,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	H-36248-2
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	10 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Brand:	MACOM
Gain:	18 dB
Maximum Operating Frequency:	1.215 GHz
Minimum Operating Frequency:	960 MHz
Output Power:	890 W
Packaging:	Reel
Product Type:	GaN FETs
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN-on-SiC
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	8,198 g

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Datasheet

GTVA107001EC-V1-R0 Datasheet (PDF)

PCN

Product Change Notification 2024-04-25 (PDF)

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USHTS:: 8541290055
ECCN:: EAR99

GTVA High-Power RF GaN on SiC HEMT

Wolfspeed / Cree GTVA High-Power RF GaN on SiC HEMT are 50V high-electron-mobility transistors (HEMT) based on gallium-nitride on silicon carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High-Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These pulsed/CW (continuous-wave) devices have a pulse width of 128µs and a duty cycle of 10%.