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CGHV35150F

Name: MACOM CGHV35150F
Brand: MACOM
SKU: 941-CGHV35150F
Price: 575.71 EUR
Availability: InStock

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Mouser No:

941-CGHV35150F

Mfr. No:

CGHV35150F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt

Datasheet:

CGHV35150F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGHV35150F

Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 17

Stock:: 17 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 17 will be subject to minimum order requirements.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	575,71 €	575,71 €
	509,73 €	5.097,30 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440193
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	12 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Development Kit:	CGHV35150-TB
Gain:	13.3 dB
Maximum Operating Frequency:	3.5 GHz
Minimum Operating Frequency:	3.1 GHz
Output Power:	170 W
Packaging:	Tray
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	20
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V

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Datasheet

CGHV35150F Datasheet (PDF)

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Compliance Codes

TARIC:: 8542399000
CNHTS:: 8542319090
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854239099
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: 3A001.b.3.a.3

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.