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CGHV1J070D-GP4

Name: MACOM CGHV1J070D-GP4
Brand: MACOM
SKU: 941-CGHV1J070D
Price: 586.25 EUR
Availability: InStock

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Mouser No:

941-CGHV1J070D

Mfr. No:

CGHV1J070D-GP4

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT Die DC-18GHz, 70 Watt

Datasheet:

CGHV1J070D-GP4 Datasheet (PDF)

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Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 70

Stock:: 70 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	586,25 €	5.862,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Maximum Operating Temperature:	+ 225 C
Brand:	MACOM
Configuration:	Single
Gain:	17 dB
Maximum Operating Frequency:	18 GHz
Minimum Operating Frequency:	10 MHz
Output Power:	70 W
Packaging:	Gel Pack
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	7,416 g

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5-0614-38

Filter Document:

Datasheet

CGHV1J070D-GP4 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.b.4

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.