CGHV1J006D-GP4

MACOM
941-CGHV1J006D
CGHV1J006D-GP4

Mfr.:

Description:
GaN FETs GaN HEMT Die DC-18GHz, 6 Watt

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Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 10   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
76,45 € 764,50 €

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
SMD/SMT
Die
N-Channel
100 V
800 mA
2.3 Ohms
- 3 V
Brand: MACOM
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 17 dB
Maximum Operating Frequency: 18 GHz
Minimum Operating Frequency: 10 MHz
Output Power: 6 W
Packaging: Gel Pack
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 3,890 g
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5-0614-38

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290040
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.