CGHV1F025S

MACOM
941-CGHV1F025S
CGHV1F025S

Mfr.:

Description:
GaN FETs GaN HEMT DC-15GHz, 25 Watt

Datasheet:
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Learn more about MACOM CGHV1F025S
This product may require additional documentation to export from the United States.

In Stock: 728

Stock:
728 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
121,15 € 121,15 €
100,41 € 1.004,10 €
90,03 € 9.003,00 €
Full Reel (Order in multiples of 250)
90,03 € 22.507,50 €
500 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
SMD/SMT
DFN-12
N-Channel
100 V
2 A
- 3 V
- 40 C
+ 150 C
Brand: MACOM
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: CGHV1F025S-TB
Gain: 11 dB
Maximum Operating Frequency: 15 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 25 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 250
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Type: GaN SiC HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 3,772 g
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TARIC:
8541290000
CNHTS:
8542319090
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8532331000
MXHTS:
8541299900
ECCN:
3A001.b.3.b.2

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

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