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CGH80030D-GP4

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See Product Specifications

Mouser No:

941-CGH80030D

Mfr. No:

CGH80030D-GP4

Mfr.:

MACOM

Lifecycle:

Obsolete

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

Mfr.:

MACOM

Mfr. No:

CG2H80030D-GP4

Description:

GaN FETs GaN HEMT Die DC-8.0GHz, 30 Watt

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	330 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Pd - Power Dissipation:	28.8 W
Brand:	MACOM
Configuration:	Single
Gain:	12 dB
Maximum Drain Gate Voltage:	28 V
Maximum Operating Frequency:	8 GHz
Output Power:	30 W
Packaging:	Gel Pack
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V