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CGH60120D-GP4

Name: MACOM CGH60120D-GP4
Brand: MACOM
SKU: 941-CGH60120D
Price: 242.54 EUR
Availability: OutOfStock

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Mouser No:

941-CGH60120D

Mfr. No:

CGH60120D-GP4

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT Die DC-6.0GHz, 120 Watt

Datasheet:

CGH60120D-GP4 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGH60120D-GP4

Shipping Alert:

This product may require additional documentation to export from the United States.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 10 Multiples: 10

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	242,54 €	2.425,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Number of Channels:	8 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Brand:	MACOM
Gain:	13 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	4 GHz
Output Power:	120 W
Packaging:	Waffle
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V

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5-0614-38

Filter Document:

Datasheet

CGH60120D-GP4 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8542399000
CNHTS:: 8542319090
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542399901
ECCN:: 3A001.b.3.a.4

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.