CGH60030D-GP4

MACOM
941-CGH60030D
CGH60030D-GP4

Mfr.:

Description:
GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt

ECAD Model:
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In Stock: 10

Stock:
10 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 10   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
116,38 € 1.163,80 €
101,85 € 10.185,00 €
500 Quote

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
GaN HEMTs
Waffle
Brand: MACOM
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 15 dB
Id - Continuous Drain Current: 3 A
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 4 GHz
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Output Power: 30 W
Package/Case: Die
Product Type: GaN FETs
Rds On - Drain-Source Resistance: 500 mOhms
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Polarity: N-Channel
Transistor Type: GaN HEMT
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
Unit Weight: 7,326 g
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5-0614-38

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99