CGH55015F2

Name: MACOM CGH55015F2
Brand: MACOM
SKU: 941-CGH55015F2
Price: 127.16 EUR
Availability: InStock

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Mouser No:

941-CGH55015F2

Mfr. No:

CGH55015F2

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt

Datasheet:

CGH55015F2 Datasheet (PDF)

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In Stock: 83

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	127,16 €	127,16 €
	99,80 €	998,00 €
	99,79 €	9.979,00 €
5.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440166
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	1.5 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Gain:	12 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	4.5 GHz
Output Power:	10 W
Packaging:	Tray
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	500 mg

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Datasheet

CGH55015F2 Datasheet (PDF)

PCN

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854239099
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.