CGH40180PP

MACOM
941-CGH40180PP
CGH40180PP

Mfr.:

Description:
GaN FETs GaN HEMT DC-2.5GHz, 180 Watt

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In Stock: 21

Stock:
21 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
682,75 € 682,75 €

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440199
N-Channel
2 Channel
120 V
24 A
- 3 V
- 40 C
+ 150 C
Brand: MACOM
Configuration: Dual
Development Kit: CGH40180PP-TB
Gain: 19 dB
Maximum Operating Frequency: 2.5 GHz
Minimum Operating Frequency: 1 GHz
Output Power: 220 W
Packaging: Tray
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 29,304 g
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TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854239099
KRHTS:
8541299000
MXHTS:
8542399901
ECCN:
EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.