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CGH40006P

Name: MACOM CGH40006P
Brand: MACOM
SKU: 941-CGH40006P
Price: 92.58 EUR
Availability: InStock

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Mouser No:

941-CGH40006P

Mfr. No:

CGH40006P

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-6.0GHz, 6 Watt

Datasheet:

CGH40006P Datasheet (PDF)

ECAD Model:

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Learn more about MACOM CGH40006P

In Stock: 146

Stock:: 146

Can Dispatch Immediately

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On Order:: 120

Expected 8/17/2026

480

Expected 11/17/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	92,58 €	92,58 €
	72,34 €	723,40 €
	69,38 €	8.325,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	440109
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	750 mA
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Development Kit:	CGH40006P-TB
Gain:	13 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	2 GHz
Output Power:	9 W
Packaging:	Tray
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	40
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	4,605 g

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Datasheet

CGH40006P Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.