APTR3216P3BT

Kingbright
604-APTR3216P3BT
APTR3216P3BT

Mfr.:

Description:
Phototransistors 3.2x1.6mm PHOTOTRANSISTOR

ECAD Model:
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In Stock: 10.902

Stock:
10.902 Can Dispatch Immediately
Factory Lead Time:
11 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,327 € 0,33 €
0,224 € 2,24 €
0,158 € 15,80 €
0,129 € 64,50 €
0,114 € 114,00 €
Full Reel (Order in multiples of 2000)
0,106 € 212,00 €
0,098 € 392,00 €
0,089 € 890,00 €
0,084 € 2.016,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Kingbright
Product Category: Phototransistors
RoHS:  
Phototransistors
1206 (3216 metric)
SMD/SMT
300 uA
30 V
5 V
800 mV
100 nA
15 us
15 us
100 mW
- 40 C
+ 85 C
HELI-R
Brand: Kingbright
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: Phototransistors
Factory Pack Quantity: 2000
Subcategory: Optical Detectors & Sensors
Wavelength: 940 nm
Part # Aliases: KPTR-3216P3BT
Unit Weight: 5,897 mg
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Attributes selected: 0

Compliance Codes
TARIC:
8541490000
CNHTS:
8541490000
CAHTS:
8541490090
USHTS:
8541497080
JPHTS:
854149000
BRHTS:
85414900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

HELI-R Phototransistor

Kingbright HELI-R Phototransistor features an SMD (surface-mounted diode) LED designed with NPN silicon phototransistor chips. This phototransistor is mechanically and spectrally matched to the infrared-emitting LED lamp. The HELI-R phototransistor provides level 3 moisture sensitivity. This phototransistor has an operating temperature range of -40°C to 85°C. The HELI-R phototransistor is ideal for use in infrared applied systems, optoelectronic switches, photodetector control circuits, and sensor technology.