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ISP16DP10LMAXTSA1

Name: Infineon ISP16DP10LMAXTSA1
Brand: Infineon Technologies
SKU: 726-ISP16DP10LMAXTSA
Price: 1.68 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-ISP16DP10LMAXTSA

Mfr. No:

ISP16DP10LMAXTSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs SMALL SIGNAL MOSFETS

Lifecycle:

New At Mouser

Datasheet:

ISP16DP10LMAXTSA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISP16DP10LMAXTSA1

In Stock: 1.613

Stock:: 1.613 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,68 €	1,68 €
	1,08 €	10,80 €
	0,718 €	71,80 €
	0,568 €	284,00 €
Full Reel (Order in multiples of 1000)
	0,537 €	537,00 €
	0,458 €	916,00 €
	0,455 €	2.275,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-223-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	3.9 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	8.2 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

ISP16DP10LMAXTSA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: China
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

12V-250V P-Channel Power MOSFETs

Infineon 12V-250V P-Channel Power MOSFETs offer the designer a new option that can simplify circuitry while optimising performance. The main advantage of a P-Channel device is the reduction of design complexity in medium- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low-voltage drive applications.