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ISG0613N04NM6HSCATMA1

Name: Infineon ISG0613N04NM6HSCATMA1
Brand: Infineon Technologies
SKU: 726-ISG0613N04NM6HSC
Price: 4.04 EUR
Availability: OutOfStock

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Mouser No:

726-ISG0613N04NM6HSC

Mfr. No:

ISG0613N04NM6HSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

ISG0613N04NM6HSCATMA1 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 6.000

Expected 7/30/2026

3.000

Expected 10/29/2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,04 €	4,04 €
	2,68 €	26,80 €
	1,90 €	190,00 €
	1,78 €	890,00 €
Full Reel (Order in multiples of 3000)
	1,66 €	4.980,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TFN-10
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	299 A
Rds On - Drain-Source Resistance:	880 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	6.1 ns
Forward Transconductance - Min:	140 S
Product Type:	MOSFETs
Rise Time:	9.3 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	ISG0613N04NM6HSC SP005575174

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Datasheet

ISG0613N04NM6HSCATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.