ISC165N15NM6ATMA1

Infineon Technologies
726-ISC165N15NM6ATMA
ISC165N15NM6ATMA1

Mfr.:

Description:
MOSFETs OptiMOS 6 power MOSFET 150 V normal level in SuperSO8 package

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies ISC165N15NM6ATMA1

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
10.000
Expected 12/31/2026
10.000
Expected 1/7/2027
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,18 € 2,18 €
1,39 € 13,90 €
0,963 € 96,30 €
0,766 € 383,00 €
0,701 € 701,00 €
Full Reel (Order in multiples of 5000)
0,654 € 3.270,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PG-TDSON-8
N-Channel
1 Channel
150 V
50 A
15.6 mOhms
20 V
4 V
14.8 nC
- 55 C
+ 175 C
95 W
Enhancement
OptiMOS
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 19 S
Product Type: MOSFETs
Rise Time: 2 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 9 ns
Typical Turn-On Delay Time: 7 ns
Part # Aliases: ISC165N15NM6 SP006055021
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Attributes selected: 0

Datasheet

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

OptiMOS™ 6 150 V Power MOSFETs

Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low RDS(on), improved switching performance, and excellent EMI behavior, which contribute to unparalleled efficiency, power density, and reliability. The OptiMOS 6 technology offers significant improvements over its predecessor, OptiMOS 5, including up to 41% lower RDS(on), 20% lower FOMg, and 17% lower FOMgd. Additionally, these MOSFETs exhibit high avalanche ruggedness and a maximum junction temperature of +175°C, ensuring robust and stable operation in demanding environments. With a wide package portfolio, Infineon OptiMOS™ 6 150V Power MOSFETs are designed to meet the stringent requirements of both high and low-switching frequency applications, providing enhanced system reliability and a longer lifetime.

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimised for synchronous rectification.

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