+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC033N10NM8ATMA1

Name: Infineon ISC033N10NM8ATMA1
Brand: Infineon Technologies
SKU: 726-ISC033N10NM8ATMA
Price: 2.59 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC033N10NM8ATMA

Mfr. No:

ISC033N10NM8ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 8 power MOSFET 100 V in SuperSO8 package

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC033N10NM8ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC033N10NM8ATMA1

In Stock: 228

Stock:: 228 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,59 €	2,59 €
	1,67 €	16,70 €
	1,20 €	120,00 €
	1,01 €	505,00 €
	0,929 €	929,00 €
	0,869 €	2.172,50 €
Full Reel (Order in multiples of 5000)
	0,86 €	4.300,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	3.33 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	59 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	179 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	40 S
Product Type:	MOSFETs
Rise Time:	2.7 ns
Series:	OptiMOS 8
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	ISC033N10NM8 SP006114988

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC033N10NM8ATMA1 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Not available
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

OptiMOS™ 8 Power MOSFETs

Infineon Technologies OptiMOS™ 8 Power MOSFETs are N-channel, normal level 80V (ISC016N08NM8 and ISC016N08NM8SC) or 100V (ISC019N10NM8SC) MOSFETs with very low on-resistance [R_DS(ON)]. The ISC016N08NM8SC and ISC019N10NM8SC are available in dual-sided cooled packages (WSON-8) while the ISC016N08NM8 comes in a standard TDSON-8 package. Each package offers superior thermal resistance and is 100% avalanche tested. Infineon Technologies OptiMOS™ 8 Power MOSFETs feature a soft-recovery diode and are lead-free, halogen-free, and RoHS-compliant.