+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC025N08NM6SCATMA1

Name: Infineon ISC025N08NM6SCATMA1
Brand: Infineon Technologies
SKU: 726-ISC025N08NM6SCAT
Price: 4.43 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC025N08NM6SCAT

Mfr. No:

ISC025N08NM6SCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 6 PowerMOSFET, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC025N08NM6SCATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC025N08NM6SCATMA1

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 1.000

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,43 €	4,43 €
	2,89 €	28,90 €
	2,26 €	226,00 €
	1,89 €	945,00 €
	1,75 €	1.750,00 €
	1,63 €	3.260,00 €
Full Reel (Order in multiples of 4000)
	1,63 €	6.520,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	170 A
Rds On - Drain-Source Resistance:	2.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	5.3 ns
Forward Transconductance - Min:	40 S
Product Type:	MOSFETs
Rise Time:	8.6 ns
Series:	OptiMOS 6
Factory Pack Quantity:	4000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	ISC025N08NM6SC SP006197456

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC025N08NM6SCATMA1 Datasheet (PDF)

TARIC:: 8541290000

OptiMOS™ 6 80V Power MOSFETs

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs set industry benchmark performance with a wide portfolio offering, including PQFN 3.3mm x 3.3mm, SuperSO8, PQFN 5mm x 6mm Dual-Side Cooling, and PQFN 3.3mm x 3.3mm Source-Down. The 80V family is ideal for high switching frequency applications such as telecom, servers, and solar. The performance improvements of OptiMOS™ 6 80V also demonstrate benefits in battery management systems (BMS).

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.