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ISC016N08NM8ATMA1

Name: Infineon ISC016N08NM8ATMA1
Brand: Infineon Technologies
SKU: 726-ISC016N08NM8ATMA
Price: 4.18 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

726-ISC016N08NM8ATMA

Mfr. No:

ISC016N08NM8ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 8 Power MOSFET, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC016N08NM8ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISC016N08NM8ATMA1

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 4.900

Expected 7/16/2026

10.500

500

Expected 8/26/2026

10.000

TBD
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,18 €	4,18 €
	2,74 €	27,40 €
	2,05 €	205,00 €
	1,71 €	855,00 €
	1,59 €	1.590,00 €
Full Reel (Order in multiples of 5000)
	1,35 €	6.750,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	268 A
Rds On - Drain-Source Resistance:	1.54 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	76 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7.2 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	6.1 ns
Series:	OptiMOS 8
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	ISC016N08NM8 SP006165693

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Datasheet

ISC016N08NM8ATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

OptiMOS™ 8 Power MOSFETs

Infineon Technologies OptiMOS™ 8 Power MOSFETs are N-channel, normal level 80V (ISC016N08NM8 and ISC016N08NM8SC) or 100V (ISC019N10NM8SC) MOSFETs with very low on-resistance [R_DS(ON)]. The ISC016N08NM8SC and ISC019N10NM8SC are available in dual-sided cooled packages (WSON-8) while the ISC016N08NM8 comes in a standard TDSON-8 package. Each package offers superior thermal resistance and is 100% avalanche tested. Infineon Technologies OptiMOS™ 8 Power MOSFETs feature a soft-recovery diode and are lead-free, halogen-free, and RoHS-compliant.