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ISA220280C03LMDSXTMA1

Name: Infineon ISA220280C03LMDSXTMA1
Brand: Infineon Technologies
SKU: 726-ISA220280C03LMDS
Price: 0.83 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-ISA220280C03LMDS

Mfr. No:

ISA220280C03LMDSXTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS Dual power MOSFET 30V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISA220280C03LMDSXTMA1 Datasheet (PDF)

ECAD Model:

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In Stock: 418

Stock:: 418 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,834 €	0,83 €
	0,517 €	5,17 €
	0,336 €	33,60 €
	0,258 €	129,00 €
	0,233 €	233,00 €
	0,212 €	424,00 €
Full Reel (Order in multiples of 4000)
	0,178 €	712,00 €
	0,171 €	1.368,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSO-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	8.1 A, 8.4 A
Rds On - Drain-Source Resistance:	22 mOhms, 28 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	8.9 nC, 7.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	3.4 ns, 9 ns
Forward Transconductance - Min:	8.5 S, 10 S
Product Type:	MOSFETs
Rise Time:	3.4 ns, 8.1 ns
Series:	Dual N+P
Factory Pack Quantity:	4000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	5.8 ns, 15 ns
Typical Turn-On Delay Time:	6.2 ns, 12 ns
Part # Aliases:	ISA220280C03LMDS SP005904287

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Datasheet

ISA220280C03LMDSXTMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

30V HEXFET® Power MOSFETs

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12V_IN / 1V to 3V_OUT DC-DC synchronous buck converter applications.