IRS2153DSTRPBF
See Product Specifications
Mfr.:
Description:
Gate Drivers Self-Osc Half Bridge Drvr 1.1us
In Stock: 2.041
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Stock:
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2.041Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
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On Order:
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2.500Expected 1/7/2027
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Factory Lead Time:
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22Weeks Estimated factory production time for quantities greater than shown.
Pricing (EUR)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| Cut Tape / MouseReel™ | ||
| 1,09 € | 1,09 € | |
| 0,793 € | 7,93 € | |
| 0,718 € | 17,95 € | |
| 0,636 € | 63,60 € | |
| 0,596 € | 149,00 € | |
| 0,572 € | 286,00 € | |
| 0,555 € | 555,00 € | |
| Full Reel (Order in multiples of 2500) | ||
| 0,531 € | 1.327,50 € | |
| 0,519 € | 2.595,00 € | |
Alternative Packaging
Datasheet
Application Notes
- Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality (PDF)
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS2153(1)D and IR2153(1)/IR2153(1)D Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- TARIC:
- 8542319000
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542390090
- KRHTS:
- 8542311000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
- Country of Origin:
- Taiwan
- Assembly Country of Origin:
- Thailand
- Country of Diffusion:
- Taiwan
Bulgaria
