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IRFS4127TRLPBF

Name: Infineon IRFS4127TRLPBF
Brand: Infineon Technologies
SKU: 942-IRFS4127TRLPBF
Price: 3.49 EUR
Availability: InStock

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Mouser No:

942-IRFS4127TRLPBF

Mfr. No:

IRFS4127TRLPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 200V 76A 23.2mOhm 100nC Qg

Datasheet:

IRFS4127TRLPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRFS4127TRLPBF

In Stock: 1.431

Stock:: 1.431

Can Dispatch Immediately

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On Order:: 8.000

Expected 6/10/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,49 €	3,49 €
	2,17 €	21,70 €
	1,61 €	161,00 €
	1,25 €	625,00 €
Full Reel (Order in multiples of 800)
	1,24 €	992,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	22 ns
Forward Transconductance - Min:	79 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	4 g

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Datasheet

IRFS4127TRLPBF Datasheet (PDF)

Application Notes

Models

Saber Model - IRFS4127 (CAD)

Product Catalogs

SPICE Models

Spice Model - IRFS4127

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.