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IRFP4468PBFXKMA1

Name: Infineon IRFP4468PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFP4468PBFXKMA1
Price: 5.37 EUR
Availability: InStock

Mouser No:

726-IRFP4468PBFXKMA1

Mfr. No:

IRFP4468PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET >60-400V

Datasheet:

IRFP4468PBFXKMA1 Datasheet (PDF)

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More Information

Learn more about Infineon Technologies IRFP4468PBFXKMA1

In Stock: 4.510

Stock:: 4.510 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,37 €	5,37 €
	3,12 €	31,20 €
	2,59 €	259,00 €
	2,50 €	1.000,00 €
	2,22 €	2.664,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247AC-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	290 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	360 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	520 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	260 ns
Forward Transconductance - Min:	310 S
Product Type:	MOSFETs
Rise Time:	230 ns
Series:	IRFP4468PBF
Factory Pack Quantity:	400
Subcategory:	Transistors
Typical Turn-Off Delay Time:	160 ns
Typical Turn-On Delay Time:	52 ns
Part # Aliases:	IRFP4468PBF SP005732695

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Datasheet

IRFP4468PBFXKMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low R_DS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

100V to 150V StrongIRFET™ Power MOSFETs

Infineon Technologies 100V to 150V StrongIRFET™ Power MOSFETs are optimized for low on-resistance (R_DS(on)) and high current capability. These devices offer an R_DS(on) as low as 1.3mΩ at 100V and a current handling capability as high as 209A at 100V. These features result in reduced conduction losses and increased power density while still accommodating legacy designs. The StrongIRFET Power MOSFETs are ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications, including DC motors, battery management systems, inverters, and DC-DC converters.