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IRFP4229PBFXKMA1

Name: Infineon IRFP4229PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFP4229PBFXKMA1
Price: 3.74 EUR
Availability: InStock

Mouser No:

726-IRFP4229PBFXKMA1

Mfr. No:

IRFP4229PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET >60-400V

Datasheet:

IRFP4229PBFXKMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IRFP4229PBFXKMA1

In Stock: 600

Stock:: 600 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,74 €	3,74 €
	2,13 €	21,30 €
	1,75 €	175,00 €
	1,60 €	640,00 €
	1,50 €	1.800,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247AC-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	44 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	72 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	310 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	19 ns
Forward Transconductance - Min:	83 S
Product Type:	MOSFETs
Rise Time:	27 ns
Factory Pack Quantity:	400
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	25 ns
Part # Aliases:	IRFP4229PBFXKMA1 SP005732690

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Datasheet

IRFP4229PBFXKMA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.