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IRFP3006PBFXKMA1

Name: Infineon IRFP3006PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFP3006PBFXKMA1
Price: 2.66 EUR
Availability: OutOfStock

Mouser No:

726-IRFP3006PBFXKMA1

Mfr. No:

IRFP3006PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET UP TO 60V

Datasheet:

IRFP3006PBFXKMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IRFP3006PBFXKMA1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Minimum: 400 Multiples: 400

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,66 €	1.064,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247AC-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	195 A
Rds On - Drain-Source Resistance:	2.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	200 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Fall Time:	189 ns
Product Type:	MOSFETs
Rise Time:	182 ns
Factory Pack Quantity:	400
Subcategory:	Transistors
Typical Turn-Off Delay Time:	118 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	IRFP3006PBFXKMA1 SP005732687

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Datasheet

IRFP3006PBFXKMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low R_DS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.