IRFP250MPBF

Infineon Technologies
942-IRFP250MPBF
IRFP250MPBF

Mfr.:

Description:
MOSFETs MOSFT 200V 30A 75mOhm 82nCAC

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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Learn more about Infineon Technologies IRFP250MPBF

In Stock: 3.204

Stock:
3.204 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,78 € 2,78 €
1,55 € 15,50 €
1,25 € 125,00 €
1,01 € 404,00 €
0,912 € 1.094,40 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
200 V
30 A
75 mOhms
- 20 V, 20 V
4 V
82 nC
- 55 C
+ 175 C
214 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 33 ns
Forward Transconductance - Min: 17 S
Product Type: MOSFETs
Rise Time: 43 ns
Factory Pack Quantity: 400
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 6 g
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
China
The country is subject to change at the time of shipment.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

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