IRFHS8342TRPBF

942-IRFHS8342TRPBF
IRFHS8342TRPBF

Mfr.:

Description:
MOSFETs 30V 1 N-CH HEXFET 16mOhms 4.2nC

Lifecycle:
Obsolete
ECAD Model:
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Availability

Stock:

Possible Replacement

Infineon Technologies ISK036N03LM5AUSA1
Infineon Technologies
MOSFETs TRENCH <= 40V
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
SMD/SMT
PQFN 2x2 (DFN2020)
N-Channel
1 Channel
30 V
19 A
25 mOhms
- 20 V, 20 V
2.35 V
4.2 nC
- 55 C
+ 150 C
2.1 W
Enhancement
StrongIRFET
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 5 ns
Forward Transconductance - Min: 18 S
Product Type: MOSFETs
Rise Time: 15 ns
Series: N-Channel
Factory Pack Quantity: 4000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 5.2 ns
Typical Turn-On Delay Time: 5.9 ns
Unit Weight: 41,155 mg
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Israel
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

Inductive Wireless Charging Solutions

Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits of wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging, whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.