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IRF7341GTRPBF

Name: Infineon IRF7341GTRPBF
Brand: Infineon Technologies
SKU: 942-IRF7341GTRPBF
Price: 2.37 EUR
Availability: InStock

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See Product Specifications

Mouser No:

942-IRF7341GTRPBF

Mfr. No:

IRF7341GTRPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs PLANAR FET

Datasheet:

IRF7341GTRPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRF7341GTRPBF

In Stock: 23.943

Stock:: 23.943 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,37 €	2,37 €
	1,42 €	14,20 €
	1,01 €	101,00 €
	0,839 €	419,50 €
	0,78 €	780,00 €
	0,768 €	1.536,00 €
Full Reel (Order in multiples of 4000)
	0,733 €	2.932,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	55 V
Id - Continuous Drain Current:	5.1 A
Rds On - Drain-Source Resistance:	65 mOhms, 65 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	12.5 ns, 12.5 ns
Forward Transconductance - Min:	10.4 S, 10.4 S
Product Type:	MOSFETs
Rise Time:	7.7 ns, 7.7 ns
Factory Pack Quantity:	4000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	31 ns, 31 ns
Typical Turn-On Delay Time:	9.2 ns, 9.2 ns
Unit Weight:	540 mg

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Datasheet

IRF7341GTRPBF Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Thailand
Country of Diffusion:: China

The country is subject to change at the time of shipment.

30V HEXFET® Power MOSFETs

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12V_IN / 1V to 3V_OUT DC-DC synchronous buck converter applications.