IR2214SSTRPBF

Infineon Technologies
942-IR2214SSTRPBF
IR2214SSTRPBF

Mfr.:

Description:
Gate Drivers 1200V half-bridge,3A DESAT &Soft SD,440n

Datasheet:
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In Stock: 3.391

Stock:
3.391 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
5,58 € 5,58 €
4,27 € 42,70 €
3,96 € 99,00 €
3,59 € 359,00 €
3,42 € 855,00 €
3,32 € 1.660,00 €
3,29 € 3.290,00 €
Full Reel (Order in multiples of 2000)
3,16 € 6.320,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
IR2214SSPBF
Packaging:
Tube
Availability:
In Stock
Price:
5,65 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SSOP-24
2 Driver
2 Output
2 A
11.5 V
20 V
Non-Inverting
24 ns
7 ns
- 40 C
+ 150 C
IR221X
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Logic Type: CMOS
Maximum Turn-Off Delay Time: 440 ns
Maximum Turn-On Delay Time: 440 ns
Moisture Sensitive: Yes
Operating Supply Current: 2.5 mA
Pd - Power Dissipation: 1.5 W
Product Type: Gate Drivers
Propagation Delay - Max: 660 ns
Rds On - Drain-Source Resistance: 60 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 1,700 g
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Compliance Codes
TARIC:
8542319000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542310030
KRHTS:
8542311000
MXHTS:
8542310302
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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