IPZA65R018CFD7XKSA1

Infineon Technologies
726-ZA65R018CFD7XKSA
IPZA65R018CFD7XKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

ECAD Model:
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In Stock: 140

Stock:
140 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
14,46 € 14,46 €
9,25 € 92,50 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-4
N-Channel
1 Channel
700 V
106 A
18 mOhms
- 20 V, 20 V
4.5 V
234 nC
- 55 C
+ 150 C
446 W
Enhancement
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Product Type: MOSFETs
Factory Pack Quantity: 240
Subcategory: Transistors
Part # Aliases: IPZA65R018CFD7 SP005413354
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.