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IPWS65R050CFD7AXKSA1

Name: Infineon IPWS65R050CFD7AXKSA1
Brand: Infineon Technologies
SKU: 726-IPWS65R050CFD7AX
Price: 8.05 EUR
Availability: InStock

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Mouser No:

726-IPWS65R050CFD7AX

Mfr. No:

IPWS65R050CFD7AXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPWS65R050CFD7AXKSA1 Datasheet (PDF)

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In Stock: 151

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,05 €	8,05 €
	4,59 €	45,90 €
	4,45 €	445,00 €
	3,93 €	1.886,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	102 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Product Type:	MOSFETs
Series:	CoolMOS CFD7A
Factory Pack Quantity:	240
Subcategory:	Transistors
Part # Aliases:	IPWS65R050CFD7A SP005405805

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Datasheet

IPWS65R050CFD7AXKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.