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IPW65R230CFD7AXKSA1

Name: Infineon IPW65R230CFD7AXKSA1
Brand: Infineon Technologies
SKU: 726-IPW65R230CFD7AXK
Price: 3.32 EUR
Availability: InStock

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Mouser No:

726-IPW65R230CFD7AXK

Mfr. No:

IPW65R230CFD7AXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPW65R230CFD7AXKSA1 Datasheet (PDF)

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In Stock: 95

Stock:: 95 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,32 €	3,32 €
	2,19 €	21,90 €
	1,50 €	150,00 €
	1,32 €	633,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	230 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	13 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	19 ns
Part # Aliases:	IPW65R230CFD7A SP003793176

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Datasheet

IPW65R230CFD7AXKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.