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IPW65R090CFD7XKSA1

Name: Infineon IPW65R090CFD7XKSA1
Brand: Infineon Technologies
SKU: 726-W65R090CFD7XKSA1
Price: 5.89 EUR
Availability: Discontinued

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Mouser No:

726-W65R090CFD7XKSA1

Mfr. No:

IPW65R090CFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPW65R090CFD7XKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPW65R090CFD7XKSA1

Availability

Stock:: 0

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Factory Lead Time:: 17 Weeks Estimated factory production time.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,89 €	5,89 €
	3,36 €	33,60 €
	2,80 €	280,00 €
	2,51 €	1.204,80 €

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IPW65R095C7XKSA1

Description:

MOSFETs HIGH POWER_NEW

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	90 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	127 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	240
Subcategory:	Transistors
Part # Aliases:	IPW65R090CFD7 SP005413364

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Filter Document:

Datasheet

IPW65R090CFD7XKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.