It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPW65R075CFD7AXKSA1

Name: Infineon IPW65R075CFD7AXKSA1
Brand: Infineon Technologies
SKU: 726-IPW65R075CFD7AXK
Price: 6.45 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPW65R075CFD7AXK

Mfr. No:

IPW65R075CFD7AXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPW65R075CFD7AXKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPW65R075CFD7AXKSA1

In Stock: 1.350

Stock:: 1.350 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,45 €	6,45 €
	3,74 €	37,40 €
	3,23 €	323,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	32 A
Rds On - Drain-Source Resistance:	75 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	171 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Product Type:	MOSFETs
Series:	CoolMOS CFD7A
Factory Pack Quantity:	240
Subcategory:	Transistors
Part # Aliases:	IPW65R075CFD7A SP005324280

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPW65R075CFD7AXKSA1 Datasheet (PDF)

Product Catalogs

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolMOS™ Power Transistors

Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.