It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPT60R022S7XTMA1

Name: Infineon IPT60R022S7XTMA1
Brand: Infineon Technologies
SKU: 726-IPT60R022S7XTMA1
Price: 10.17 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPT60R022S7XTMA1

Mfr. No:

IPT60R022S7XTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Datasheet:

IPT60R022S7XTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPT60R022S7XTMA1

In Stock: 21

Stock:: 21

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 2.000

Expected 11/19/2026

12.000

6.000

Expected 4/15/2027

6.000

Expected 5/13/2027
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	10,17 €	10,17 €
	7,03 €	70,30 €
	6,06 €	606,00 €
Full Reel (Order in multiples of 2000)
	6,06 €	12.120,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	23 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	390 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	S7
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	30 ns
Part # Aliases:	IPT60R022S7 SP003330410
Unit Weight:	771,020 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPT60R022S7XTMA1 Datasheet (PDF)

Product Catalogs

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

600V CoolMOS™ SJ S7/S7T Power MOSFETs

Infineon Technologies 600V CoolMOS™ SJ S7/S7T Power MOSFETs offer an ideal price performance for low-frequency switching applications. The CoolMOS S7 and S7T series features a low R_DS(on) value for an HV SJ MOSFET, with an increase in energy efficiency. Infineon CoolMOS S7 and S7T MOSFETs are optimized for static-switching and high-current applications. The MOSFETs come in a TOLL or a Q-DPAK package with top-side and bottom-side variants. The CoolMOS SJ S7 MOSFETs target applications where switching losses are irrelevant. The CoolMOS SJ S7T devices integrate a temperature sensor to improve junction temperature sensing accuracy. The devices are geared toward solid-state solutions, such as solid-state circuit breakers and solid-state relay (SSR) applications.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.