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IPP330P10NMAKSA1

Name: Infineon IPP330P10NMAKSA1
Brand: Infineon Technologies
SKU: 726-IPP330P10NMAKSA1
Price: 4.61 EUR
Availability: InStock

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Mouser No:

726-IPP330P10NMAKSA1

Mfr. No:

IPP330P10NMAKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Datasheet:

IPP330P10NMAKSA1 Datasheet (PDF)

ECAD Model:

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In Stock: 794

Stock:: 794 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,61 €	4,61 €
	2,40 €	24,00 €
	2,18 €	218,00 €
	2,08 €	1.040,00 €
	1,81 €	1.810,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	189 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Product Type:	MOSFETs
Series:	IPP330P10
Factory Pack Quantity:	500
Subcategory:	Transistors
Part # Aliases:	IPP330P10NM SP005343871

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Datasheet

IPP330P10NMAKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

12V-250V P-Channel Power MOSFETs

Infineon 12V-250V P-Channel Power MOSFETs offer the designer a new option that can simplify circuitry while optimising performance. The main advantage of a P-Channel device is the reduction of design complexity in medium- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low-voltage drive applications.