IPP019N08NF2SAKMA1

Infineon Technologies
726-IPP019N08NF2SAKM
IPP019N08NF2SAKMA1

Mfr.:

Description:
MOSFETs IFX FET > 60-80V

ECAD Model:
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In Stock: 1.326

Stock:
1.326 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,16 € 3,16 €
1,61 € 16,10 €
1,44 € 144,00 €
1,24 € 620,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
80 V
191 A
1.9 mOhms
- 20 V, 20 V
3.8 V
124 nC
- 55 C
+ 175 C
250 W
Enhancement
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Part # Aliases: IPP019N08NF2S SP005548842
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

MOSFETs for General Purpose Applications

Infineon Technologies MOSFETs for General Purpose Applications offer simple and price-competitive solutions with a wide availability and established quality. This portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs, and products for smaller power handling (single and dual N- and P-channel MOSFETs). The selected parts come in a wide range of packages including SOT-23, PQFN 2x2, PQFN 3x3, DPAK, SO-8, SuperSO8 5x6, and TO220. These products address a broad range of general-purpose applications like adapters, chargers, battery-powered applications, motor control and drives, battery management systems, inverters, computing, and mobile applications.

StrongIRFET™ 2 Power MOSFETs

Infineon Technologies StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, and 100% avalanche tested MOSFETs. The Infineon StrongIRFET 2 MOSFETs are optimized for a wide range of applications. The MOSFETs offer a VDS range of 80V to 100V and an RDS(on) from 2.4mΩ to 8.2mΩ.