It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPP016N06NF2SAKMA1

Name: Infineon IPP016N06NF2SAKMA1
Brand: Infineon Technologies
SKU: 726-P016N06NF2SAKMA1
Price: 2.37 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-P016N06NF2SAKMA1

Mfr. No:

IPP016N06NF2SAKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPP016N06NF2SAKMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPP016N06NF2SAKMA1

In Stock: 1.278

Stock:: 1.278 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,37 €	2,37 €
	1,18 €	11,80 €
	1,06 €	106,00 €
	0,835 €	417,50 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	194 A
Rds On - Drain-Source Resistance:	1.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	155 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	27 ns
Forward Transconductance - Min:	130 S
Product Type:	MOSFETs
Rise Time:	34 ns
Series:	XPP016N06
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	27 ns
Part # Aliases:	IPP016N06NF2S SP005742470

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPP016N06NF2SAKMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

MOSFETs for General Purpose Applications

Infineon Technologies MOSFETs for General Purpose Applications offer simple and price-competitive solutions with a wide availability and established quality. This portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs, and products for smaller power handling (single and dual N- and P-channel MOSFETs). The selected parts come in a wide range of packages including SOT-23, PQFN 2x2, PQFN 3x3, DPAK, SO-8, SuperSO8 5x6, and TO220. These products address a broad range of general-purpose applications like adapters, chargers, battery-powered applications, motor control and drives, battery management systems, inverters, computing, and mobile applications.

StrongIRFET™ 2 Power MOSFETs

Infineon Technologies StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, and 100% avalanche tested MOSFETs. The Infineon StrongIRFET 2 MOSFETs are optimized for a wide range of applications. The MOSFETs offer a V_DS range of 80V to 100V and an R_DS(on) from 2.4mΩ to 8.2mΩ.