It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPL65R200CFD7AUMA1

Name: Infineon IPL65R200CFD7AUMA1
Brand: Infineon Technologies
SKU: 726-IPL65R200CFD7AUM
Price: 2.8 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPL65R200CFD7AUM

Mfr. No:

IPL65R200CFD7AUMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPL65R200CFD7AUMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPL65R200CFD7AUMA1

In Stock: 277

Stock:: 277 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 39 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 277 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,80 €	2,80 €
	1,82 €	18,20 €
	1,27 €	127,00 €
	1,08 €	540,00 €
	1,04 €	1.040,00 €
Full Reel (Order in multiples of 3000)
	1,01 €	3.030,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	81 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	5 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	6.5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	70 ns
Part # Aliases:	IPL65R200CFD7 SP005559257

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPL65R200CFD7AUMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™ Power Transistors

Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.