It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPD90P03P4L04ATMA2

Name: Infineon IPD90P03P4L04ATMA2
Brand: Infineon Technologies
SKU: 726-IPD90P03P4L04AT2
Price: 2.51 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPD90P03P4L04AT2

Mfr. No:

IPD90P03P4L04ATMA2

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFET_(20V 40V)

Datasheet:

IPD90P03P4L04ATMA2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPD90P03P4L04ATMA2

In Stock: 3.788

Stock:: 3.788

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 7.500

Expected 7/30/2026
Factory Lead Time:: 9

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,51 €	2,51 €
	1,63 €	16,30 €
	1,12 €	112,00 €
	0,903 €	451,50 €
	0,846 €	846,00 €
Full Reel (Order in multiples of 2500)
	0,79 €	1.975,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	4.1 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	125 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	137 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Part # Aliases:	IPD90P03P4L-04 SP002325742
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPD90P03P4L04ATMA2 Datasheet (PDF)

Product Catalogs

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

OptiMOS®-P2 Automotive MOSFETs

Infineon Technologies OptiMOS®-P2 Automotive MOSFETs offers a comprehensive portfolio of P-channel automotive power MOSFETs with the technology of OptiMOS-P2 and Gen5. The Automotive MOSFETs are AEC qualified and supports a 175°C operating temperature. The Infineon OptiMOS-P2 Automotive MOSFETs are available in DPAK, D2PAK, TO220, TO262, and SO8 packages.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.