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IPD60R1K5PFD7SAUMA1

Name: Infineon IPD60R1K5PFD7SAUMA1
Brand: Infineon Technologies
SKU: 726-IPD60R1K5PFD7SAU
Price: 0.99 EUR
Availability: InStock

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Mouser No:

726-IPD60R1K5PFD7SAU

Mfr. No:

IPD60R1K5PFD7SAUMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs CONSUMER

Datasheet:

IPD60R1K5PFD7SAUMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPD60R1K5PFD7SAUMA1

In Stock: 1.726

Stock:: 1.726 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,998 €	1,00 €
	0,626 €	6,26 €
	0,439 €	43,90 €
	0,345 €	172,50 €
	0,303 €	303,00 €
Full Reel (Order in multiples of 2500)
	0,255 €	637,50 €
	0,224 €	1.120,00 €
	0,222 €	2.220,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3-11
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	2.9 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	4.6 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	22 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Fall Time:	75 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	41.5 ns
Typical Turn-On Delay Time:	6.4 ns
Part # Aliases:	IPD60R1K5PFD7S SP004748872
Unit Weight:	324 mg

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Datasheet

IPD60R1K5PFD7SAUMA1 Datasheet (PDF)

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IPD60R1K5PFD7SAUMA1 Symbol & Footprint by SnapMagic

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

CoolMOS™ Power Transistors

Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

600V CoolMOS™ PFD7 SJ Power MOSFET

Infineon 600V CoolMOS™ PFD7 SJ Power MOSFETs are a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction (SJ) principle and pioneered by Infineon. The CoolMOS™ PFD7 is an optimized platform tailored to target cost-sensitive applications in consumer markets, such as chargers, adapters, motor drives, lighting, etc. The series provides all the benefits of a fast-switching Super junction MOSFET, combined with an excellent price/performance ratio and state-of-the-art ease-of-use level. The technology meets the highest efficiency standards and supports high power density, enabling customers to go towards slim designs.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.