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IPD30N08S2L-21

Name: Infineon IPD30N08S2L-21
Brand: Infineon Technologies
SKU: 726-IPD30N08S2L-21
Price: 2.3 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-IPD30N08S2L-21

Mfr. No:

IPD30N08S2L-21

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS

Datasheet:

IPD30N08S2L-21 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPD30N08S2L-21

In Stock: 17.856

Stock:: 17.856 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,30 €	2,30 €
	1,48 €	14,80 €
	1,01 €	101,00 €
	0,851 €	425,50 €
	0,753 €	753,00 €
Full Reel (Order in multiples of 2500)
	0,711 €	1.777,50 €
	0,68 €	3.400,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

IPD30N08S2L21ATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

2,23 €

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	75 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	20.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	SP000252170 IPD3N8S2L21XT IPD30N08S2L21ATMA1
Unit Weight:	4 g

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Datasheet

IPD30N08S2L-21 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

75V to 100V N-Channel Automotive MOSFETs

Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications. These modules are available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These Infineon MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C0₂ emission-reducing 48V power subsystem known as Board Net.