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IPD18DP10LMATMA1

Name: Infineon IPD18DP10LMATMA1
Brand: Infineon Technologies
SKU: 726-IPD18DP10LMATMA1
Price: 1.74 EUR
Availability: InStock

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Mouser No:

726-IPD18DP10LMATMA1

Mfr. No:

IPD18DP10LMATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Datasheet:

IPD18DP10LMATMA1 Datasheet (PDF)

ECAD Model:

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In Stock: 742

Stock:: 742 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,74 €	1,74 €
	1,12 €	11,20 €
	0,747 €	74,70 €
	0,593 €	296,50 €
	0,543 €	543,00 €
Full Reel (Order in multiples of 2500)
	0,494 €	1.235,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	13.9 A
Rds On - Drain-Source Resistance:	178 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Product Type:	MOSFETs
Series:	IPD18DP10
Factory Pack Quantity:	2500
Subcategory:	Transistors
Part # Aliases:	IPD18DP10LM SP005343850

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Datasheet

IPD18DP10LMATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

12V-250V P-Channel Power MOSFETs

Infineon 12V-250V P-Channel Power MOSFETs offer the designer a new option that can simplify circuitry while optimising performance. The main advantage of a P-Channel device is the reduction of design complexity in medium- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low-voltage drive applications.