IPB60R145CFD7ATMA1

Infineon Technologies
726-IPB60R145CFD7ATM
IPB60R145CFD7ATMA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 73

Stock:
73 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,41 € 3,41 €
2,24 € 22,40 €
1,58 € 158,00 €
1,43 € 715,00 €
Full Reel (Order in multiples of 1000)
1,38 € 1.380,00 €
1,33 € 2.660,00 €
1,32 € 6.600,00 €

Similar Product

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MOSFETs HIGH POWER_NEW
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
16 A
145 mOhms
- 20 V, 20 V
4.5 V
31 nC
- 55 C
+ 150 C
83 W
Enhancement
Reel
Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 7.2 ns
Product Type: MOSFETs
Rise Time: 18 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 71 ns
Typical Turn-On Delay Time: 27 ns
Part # Aliases: IPB60R145CFD7 SP002621138
Unit Weight: 4 g
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

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