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IPB50R199CP

Name: Infineon IPB50R199CP
Brand: Infineon Technologies
SKU: 726-IPB50R199CP
Price: 1.18 EUR
Availability: OutOfStock

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Mouser No:

726-IPB50R199CP

Mfr. No:

IPB50R199CP

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 550V 17A D2PAK-2 CoolMOS CP

Datasheet:

IPB50R199CP Datasheet (PDF)

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Learn more about Infineon Technologies IPB50R199CP

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	1,18 €	1.180,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	45 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	139 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	10 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	CoolMOS CE
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	35 ns
Part # Aliases:	IPB5R199CPXT SP000236092 IPB50R199CPATMA1
Unit Weight:	4 g

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Datasheet

IPB50R199CP Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

CoolMOS™ CE Power MOSFETs

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.