IPB50CN10N G

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Mouser No:

726-IPB50CN10NG

Mfr. No:

IPB50CN10N G

Mfr.:

Infineon Technologies

Lifecycle:

Obsolete

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	49 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	44 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	IPB50CN10
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	IPB50CN10NGATMA1
Unit Weight:	4 g

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