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IPB160N04S4-H1

Name: Infineon IPB160N04S4-H1
Brand: Infineon Technologies
SKU: 726-IPB160N04S4-H1
Price: 2.82 EUR
Availability: InStock

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Mouser No:

726-IPB160N04S4-H1

Mfr. No:

IPB160N04S4-H1

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS-T2

Datasheet:

IPB160N04S4-H1 Datasheet (PDF)

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In Stock: 313

Stock:: 313 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,82 €	2,82 €
	1,84 €	18,40 €
	1,41 €	141,00 €
	1,18 €	590,00 €
Full Reel (Order in multiples of 1000)
	1,02 €	1.020,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

IPB160N04S4H1ATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

2,82 €

Min:

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IPB160N04S4H1ATMA1

Description:

MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS-T2

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	1.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	137 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	33 ns
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	OptiMOS-T2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	28 ns
Part # Aliases:	IPB16N4S4H1XT SP000711252 IPB160N04S4H1ATMA1
Unit Weight:	1,600 g

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Datasheet

IPB160N04S4-H1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs

Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

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