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IPB100N08S2-07

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See Product Specifications

Mouser No:

726-IPB100N08S207

Mfr. No:

IPB100N08S2-07

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 75V 100A D2PAK-2 OptiMOS

Lifecycle:

Obsolete

Datasheet:

IPB100N08S2-07 Datasheet (PDF)

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

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Possible Replacement

Mfr.:

Infineon Technologies

Mfr. No:

IAUC100N08S5N043ATMA1

Description:

MOSFETs MOSFET_(75V 120V(

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	75 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	7.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	144 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	30 ns
Product Type:	MOSFETs
Rise Time:	51 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	26 ns
Part # Aliases:	SP000219044 IPB1N8S27XT IPB100N08S207ATMA1
Unit Weight:	4 g

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Datasheet

IPB100N08S2-07 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.