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IKB40N65EH5ATMA1

Name: Infineon IKB40N65EH5ATMA1
Brand: Infineon Technologies
SKU: 726-IKB40N65EH5ATMA1
Price: 4.37 EUR
Availability: InStock

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Mouser No:

726-IKB40N65EH5ATMA1

Mfr. No:

IKB40N65EH5ATMA1

Mfr.:

Infineon Technologies

Description:

IGBTs INDUSTRY

Datasheet:

IKB40N65EH5ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IKB40N65EH5ATMA1

In Stock: 1.280

Stock:: 1.280 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,37 €	4,37 €
	2,71 €	27,10 €
	2,18 €	218,00 €
	1,90 €	950,00 €
Full Reel (Order in multiples of 1000)
	1,74 €	1.740,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	D2PAK-3 (TO-263-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	74 A
Pd - Power Dissipation:	250 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT5
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	74 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKB40N65EH5 SP001502650
Unit Weight:	1,563 g

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Datasheet

IKB40N65EH5ATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs

Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high-speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. Infineon H5 IGBTs offer leading efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid- to high-range switching frequency converters.