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IHW30N110R5XKSA1

Name: Infineon IHW30N110R5XKSA1
Brand: Infineon Technologies
SKU: 726-IHW30N110R5XKSA1
Price: 3.9 EUR
Availability: InStock

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Mouser No:

726-IHW30N110R5XKSA1

Mfr. No:

IHW30N110R5XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs HOME APPLIANCES

Datasheet:

IHW30N110R5XKSA1 Datasheet (PDF)

ECAD Model:

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In Stock: 235

Stock:: 235 Can Dispatch Immediately

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Factory Lead Time:: 36 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,90 €	3,90 €
	2,16 €	21,60 €
	1,77 €	177,00 €
	1,48 €	710,40 €
	1,46 €	1.752,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.1 kV
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	330 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IHW30N110
Packaging:	Tube
Brand:	Infineon Technologies
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Part # Aliases:	IHW30N110R5 SP005727472

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Datasheet

IHW30N110R5XKSA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

Next Generation Reverse Conducting IGBTs

Infineon Technologies 650V/1200V/1350V/1600V Next Generation Reverse Conducting IGBTs combine the performance of the TRENCHSTOP™ family with the innovative reverse conducting RC-H IGBT technology to create a generation of best-in-class devices. The devices provide increased switching frequency, low power dissipation, and improved thermal management for higher reliability.

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.