IHW30N110R5XKSA1

Infineon Technologies
726-IHW30N110R5XKSA1
IHW30N110R5XKSA1

Mfr.:

Description:
IGBTs HOME APPLIANCES

ECAD Model:
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In Stock: 235

Stock:
235 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,16 € 3,16 €
1,74 € 17,40 €
1,42 € 142,00 €
1,20 € 576,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
Through Hole
Single
1.1 kV
1.55 V
- 25 V, 25 V
60 A
330 W
- 40 C
+ 175 C
IHW30N110
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Part # Aliases: IHW30N110R5 SP005727472
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.

Next Generation Reverse Conducting IGBTs

Infineon Technologies 650V/1200V/1350V/1600V Next Generation Reverse Conducting IGBTs combine the performance of the TRENCHSTOP™ family with the innovative reverse conducting RC-H IGBT technology to create a generation of best-in-class devices. The devices provide increased switching frequency, low power dissipation, and improved thermal management for higher reliability.