+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGW50N60H3

Name: Infineon IGW50N60H3
Brand: Infineon Technologies
SKU: 726-IGW50N60H3
Price: 4.02 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGW50N60H3

Mfr. No:

IGW50N60H3

Mfr.:

Infineon Technologies

Description:

IGBTs 600V 50A 333W

Datasheet:

IGW50N60H3 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IGW50N60H3

In Stock: 10

Stock:: 10

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 480

Expected 3/18/2026

140

Expected 5/14/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,02 €	4,02 €
	2,24 €	22,40 €
	1,85 €	185,00 €
	1,65 €	792,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	333 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	HighSpeed 3
Packaging:	Tube
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	100 A
Country of Assembly:	CN
Country of Diffusion:	Not Available
Country of Origin:	MY
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	SP000702548 IGW5N6H3XK IGW50N60H3FKSA1
Unit Weight:	38 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGW50N60H3 Datasheet (PDF)

Product Catalogs

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.